Buy Mil Spares is your sourcing solution for top-quality military and defense parts, aerospace parts, and other similar products that are necessary for operational fulfillment. You have reached the RFQ page for part number A3110506-002, a Transistor item that is listed with the NSN 5961-01-394-2115 for an ease of identification. Manufactured by Solitron Devices Inc and readily available for procurement today, you are always welcome to request a quote on this NSN part to receive tailored pricing information and fulfillment options from our team. Simply offer us important information like your desired quantity, price, and fulfillment timeframe, and our team will supply you with a tailored quote on part number A3110506-002 in 15 minutes or less.
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To ensure that customers quickly identify and procure exact items, we list everything with as much relevant information as possible. For example, while part number A3110506-002 is manufactured by Solitron Devices Inc, it is specifically done so under CAGE Code 21845, a unique identifier assigned to a specific facility by the DLA that supplies to various government or defense agencies. Furthermore, using the first digits of the NSN 5961-01-394-2115, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. With this in mind, continue exploring our website today, and see how we can help you secure competitive pricing and rapid lead times on all desired NSN parts.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-394-2115 Item PartTypeName: TRANSISTOR | 5961 | 013942115 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| OM1825SC | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 13.00 AMPERES MAXIMUM DRAIN CURRENT |
| FEAT | SPECIAL FEATURES | CASE CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| TEST | TEST DATA DOCUMENT | 80063-A3110506 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| ABHP | OVERALL LENGTH | 1.120 INCHES NOMINAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ABBH | INCLOSURE MATERIAL | CERAMIC |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.520 INCHES NOMINAL |
| ABMK | OVERALL WIDTH | 0.705 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 16.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTRD | POWER RATING PER CHARACTERISTIC | 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
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