Buy Mil Spares is your sourcing solution for top-quality military and defense parts, aerospace parts, and other similar products that are necessary for operational fulfillment. You have reached the RFQ page for part number MMBZ20VALT1G, a Semiconductor Devices Unitized item that is listed with the NSN 5961-01-660-7000 for an ease of identification. Manufactured by Semiconductor Components Industries and readily available for procurement today, you are always welcome to request a quote on this NSN part to receive tailored pricing information and fulfillment options from our team. Simply offer us important information like your desired quantity, price, and fulfillment timeframe, and our team will supply you with a tailored quote on part number MMBZ20VALT1G in 15 minutes or less.
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To ensure that customers quickly identify and procure exact items, we list everything with as much relevant information as possible. For example, while part number MMBZ20VALT1G is manufactured by Semiconductor Components Industries, it is specifically done so under CAGE Code 1MQ07, a unique identifier assigned to a specific facility by the DLA that supplies to various government or defense agencies. Furthermore, using the first digits of the NSN 5961-01-660-7000, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. With this in mind, continue exploring our website today, and see how we can help you secure competitive pricing and rapid lead times on all desired NSN parts.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-660-7000 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 016607000 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| MMBZ20VALT1G | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQX | Current Rating Per Characteristic | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
| AXGY | Mounting Method | TERMINAL |
| CTQX | Current Rating Per Characteristic | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 2ND SEMICONDUCTOR DEVICE DIODE |
| AFZC | Function For Which Designed | TRANSIENT SUPPRESSOR AND ZENER DIODE |
| ABKW | Overall Height | 0.039 INCHES NOMINAL |
| TTQY | Terminal Type And Quantity | 3 PRINTED CIRCUIT |
| CTMZ | Semiconductor Material | SILICON 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 1ST SEMICONDUCTOR DEVICE DIODE |
| MRC | Decoded Requirement | Clear Text Reply |
| ABHP | Overall Length | 0.114 INCHES NOMINAL |
| ABBH | Inclosure Material | PLASTIC |
| ABMK | Overall Width | 0.094 INCHES NOMINAL |
| ASKA | Component Name And Quantity | 2 SEMICONDUCTOR DEVICE PHOTO |
| CTMZ | Semiconductor Material | SILICON 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 1ST SEMICONDUCTOR DEVICE DIODE |
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