Buy Mil Spares is your sourcing solution for top-quality military and defense parts, aerospace parts, and other similar products that are necessary for operational fulfillment. You have reached the RFQ page for part number G553942-100, a Microcircuit Memory item that is listed with the NSN 5962-01-388-0098 for an ease of identification. Manufactured by Raytheon Company and readily available for procurement today, you are always welcome to request a quote on this NSN part to receive tailored pricing information and fulfillment options from our team. Simply offer us important information like your desired quantity, price, and fulfillment timeframe, and our team will supply you with a tailored quote on part number G553942-100 in 15 minutes or less.
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To ensure that customers quickly identify and procure exact items, we list everything with as much relevant information as possible. For example, while part number G553942-100 is manufactured by Raytheon Company, it is specifically done so under CAGE Code 3B150, a unique identifier assigned to a specific facility by the DLA that supplies to various government or defense agencies. Furthermore, using the first digits of the NSN 5962-01-388-0098, one can also determine that this part falls under FSC 5962 Microcircuits Electronic. With this in mind, continue exploring our website today, and see how we can help you secure competitive pricing and rapid lead times on all desired NSN parts.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-388-0098 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013880098 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
G553942-100 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | NEXT ASSY:G526515 USED ON:COBRA DANE |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-38510/20702BEA GOVERNMENT SPECIFICATION |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
CBBL | FEATURES PROVIDED | BIPOLAR AND BURN IN AND PROGRAMMED AND SCHOTTKY AND ELECTROSTATIC SENSITIVE AND TESTED TO MIL-STD-883 AND 3-STATE OUTPUT |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 256-BIT FUSED PROM |
CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
ZZZX | DEPARTURE FROM CITED DESIGNATOR | PROGRAMMED PER: PRG553942-100 |
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