Buy Mil Spares is your sourcing solution for top-quality military and defense parts, aerospace parts, and other similar products that are necessary for operational fulfillment. You have reached the RFQ page for part number 2N1253, a Transistor item that is listed with the NSN 5961-00-814-2693 for an ease of identification. Manufactured by National Semiconductor Corporation and readily available for procurement today, you are always welcome to request a quote on this NSN part to receive tailored pricing information and fulfillment options from our team. Simply offer us important information like your desired quantity, price, and fulfillment timeframe, and our team will supply you with a tailored quote on part number 2N1253 in 15 minutes or less.
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To ensure that customers quickly identify and procure exact items, we list everything with as much relevant information as possible. For example, while part number 2N1253 is manufactured by National Semiconductor Corporation, it is specifically done so under CAGE Code 12040, a unique identifier assigned to a specific facility by the DLA that supplies to various government or defense agencies. Furthermore, using the first digits of the NSN 5961-00-814-2693, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. With this in mind, continue exploring our website today, and see how we can help you secure competitive pricing and rapid lead times on all desired NSN parts.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-814-2693 Item PartTypeName: TRANSISTOR | 5961 | 008142693 | 0 | N | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | U | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| RELEASE2591 | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE2591 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
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