Buy Mil Spares is your sourcing solution for top-quality military and defense parts, aerospace parts, and other similar products that are necessary for operational fulfillment. You have reached the RFQ page for part number 77A112799P1, a Semiconductor Devic item that is listed with the NSN 5961-01-372-8127 for an ease of identification. Manufactured by Lockheed Martin Corporation and readily available for procurement today, you are always welcome to request a quote on this NSN part to receive tailored pricing information and fulfillment options from our team. Simply offer us important information like your desired quantity, price, and fulfillment timeframe, and our team will supply you with a tailored quote on part number 77A112799P1 in 15 minutes or less.
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To ensure that customers quickly identify and procure exact items, we list everything with as much relevant information as possible. For example, while part number 77A112799P1 is manufactured by Lockheed Martin Corporation, it is specifically done so under CAGE Code 03538, a unique identifier assigned to a specific facility by the DLA that supplies to various government or defense agencies. Furthermore, using the first digits of the NSN 5961-01-372-8127, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. With this in mind, continue exploring our website today, and see how we can help you secure competitive pricing and rapid lead times on all desired NSN parts.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-372-8127 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 013728127 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 77A112799P001 | 5 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 4TH TRANSISTOR AND 5.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 4TH TRANSISTOR AND 50.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 4TH TRANSIS |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 2ND TRANSISTOR |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 3RD TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 4TH TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.375 INCHES NOMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| ABMK | OVERALL WIDTH | 0.340 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 2ND TRANSISTOR AND-4.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 2ND TRANSISTOR AND-60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 2ND TRAN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 3RD TRANSISTOR AND-4.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 3RD TRANSISTOR AND-60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 3RD TRAN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 1ST TRANSISTOR AND 5.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 1ST TRANSISTOR AND 50.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 1ST TRANSIS |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES NOMINAL COLLECTOR CURRENT,DC ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 1ST TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 9 PIN |
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