Buy Mil Spares is your sourcing solution for top-quality military and defense parts, aerospace parts, and other similar products that are necessary for operational fulfillment. You have reached the RFQ page for part number IDT7204L80DB, a Microcircuit Memory item that is listed with the NSN 5962-01-422-0377 for an ease of identification. Manufactured by Integrated Device Technology Inc and readily available for procurement today, you are always welcome to request a quote on this NSN part to receive tailored pricing information and fulfillment options from our team. Simply offer us important information like your desired quantity, price, and fulfillment timeframe, and our team will supply you with a tailored quote on part number IDT7204L80DB in 15 minutes or less.
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To ensure that customers quickly identify and procure exact items, we list everything with as much relevant information as possible. For example, while part number IDT7204L80DB is manufactured by Integrated Device Technology Inc, it is specifically done so under CAGE Code 61772, a unique identifier assigned to a specific facility by the DLA that supplies to various government or defense agencies. Furthermore, using the first digits of the NSN 5962-01-422-0377, one can also determine that this part falls under FSC 5962 Microcircuits Electronic. With this in mind, continue exploring our website today, and see how we can help you secure competitive pricing and rapid lead times on all desired NSN parts.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-422-0377 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014220377 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8956802XX | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.000 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 8.000 INPUT PICOFARADS MAXIMUM" |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.000 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.000 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 8.000 INPUT PICOFARADS MAXIMUM" |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.000 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
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