Buy Mil Spares is your sourcing solution for top-quality military and defense parts, aerospace parts, and other similar products that are necessary for operational fulfillment. You have reached the RFQ page for part number QPND-3022, a Semiconductor Device Diode item that is listed with the NSN 5961-01-467-6583 for an ease of identification. Manufactured by Hewlett-Packard Company and readily available for procurement today, you are always welcome to request a quote on this NSN part to receive tailored pricing information and fulfillment options from our team. Simply offer us important information like your desired quantity, price, and fulfillment timeframe, and our team will supply you with a tailored quote on part number QPND-3022 in 15 minutes or less.
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To ensure that customers quickly identify and procure exact items, we list everything with as much relevant information as possible. For example, while part number QPND-3022 is manufactured by Hewlett-Packard Company, it is specifically done so under CAGE Code 54893, a unique identifier assigned to a specific facility by the DLA that supplies to various government or defense agencies. Furthermore, using the first digits of the NSN 5961-01-467-6583, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. With this in mind, continue exploring our website today, and see how we can help you secure competitive pricing and rapid lead times on all desired NSN parts.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-467-6583 Item PartTypeName: SEMICONDUCTOR DEVICE,DIODE | 5961 | 014676583 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
QPND-3022 | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS" |
ABHP | OVERALL LENGTH | 30.000 MILLIMETERS MAXIMUM" |
ABJT | TERMINAL LENGTH | 12.600 MILLIMETERS MAXIMUM" |
ABKW | OVERALL HEIGHT | 2.400 MILLIMETERS MAXIMUM" |
ABMK | OVERALL WIDTH | 5.100 MILLIMETERS MAXIMUM" |
AKPV | MOUNTING FACILITY QUANTITY | 2" |
AXGY | MOUNTING METHOD | TERMINAL" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK" |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE" |
FEAT | SPECIAL FEATURES | HARDNESS CRITICAL ITEM" |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
ABBH | INCLOSURE MATERIAL | GLASS" |
ABHP | OVERALL LENGTH | 30.000 MILLIMETERS MAXIMUM" |
ABJT | TERMINAL LENGTH | 12.600 MILLIMETERS MAXIMUM" |
ABKW | OVERALL HEIGHT | 2.400 MILLIMETERS MAXIMUM" |
ABMK | OVERALL WIDTH | 5.100 MILLIMETERS MAXIMUM" |
AKPV | MOUNTING FACILITY QUANTITY | 2" |
AXGY | MOUNTING METHOD | TERMINAL" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK" |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE" |
FEAT | SPECIAL FEATURES | HARDNESS CRITICAL ITEM" |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
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