Buy Mil Spares is your sourcing solution for top-quality military and defense parts, aerospace parts, and other similar products that are necessary for operational fulfillment. You have reached the RFQ page for part number 5309-1N, a Microcircuit Set item that is listed with the NSN 5962-01-363-0915 for an ease of identification. Manufactured by Harnischfeger Corp and readily available for procurement today, you are always welcome to request a quote on this NSN part to receive tailored pricing information and fulfillment options from our team. Simply offer us important information like your desired quantity, price, and fulfillment timeframe, and our team will supply you with a tailored quote on part number 5309-1N in 15 minutes or less.
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To ensure that customers quickly identify and procure exact items, we list everything with as much relevant information as possible. For example, while part number 5309-1N is manufactured by Harnischfeger Corp, it is specifically done so under CAGE Code 56010, a unique identifier assigned to a specific facility by the DLA that supplies to various government or defense agencies. Furthermore, using the first digits of the NSN 5962-01-363-0915, one can also determine that this part falls under FSC 5962 Microcircuits Electronic. With this in mind, continue exploring our website today, and see how we can help you secure competitive pricing and rapid lead times on all desired NSN parts.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-8769001RA | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CBBL | FEATURES PROVIDED | PROGRAMMED |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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