For all the NSN 5962-01-466-0645 parts you are seeking, turn to our vast collection of offerings here on Buy Mil Spares. On this page, part numbers like IDT7164L45D8, 5962-3829410MXA, 5962-3829410MXB, 5962-38294, P4C164L-45DWMB, and others with the NSN 5962-01-466-0645 are featured alongside applicable listing information for your ease of perusal. If any specific item grabs your attention within our NSN 5962-01-466-0645 inventory, you can use the “RFQ” button to its right to access one of our online quote request forms. Once we have an opportunity to receive and assess the details you provided, you can anticipate a tailored response in 15 minutes or less.
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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-466-0645 (014660645) |
| NCB Code | USA (01) |
| Manufacturer | Integrated Device Technology Inc, Dla Land And Maritime, Performance Semiconductor Corp, Pyramid Semiconductor Corp |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| IDT7164L45D8 | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| 5962-3829410MXA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-3829410MXB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-38294 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| P4C164L-45DWMB | performance semiconductor corp | microcircuit memory | 75569 | RFQ |
| 5962-3829410MXX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| P4C164L-45DWMB | pyramid semiconductor corp | microcircuit memory | 3dtt2 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | NUCLEAR POWER PLANTS |
| CBBL | FEATURES PROVIDED | MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | DATA RETENTION - YES/ACCESS TIME - 45 NS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-466-0645, 5962014660645 | ||||
| 5999-00-031-0778 (5999000310778) | 5962-01-097-4035 (5962010974035) | 5985-00-258-8660 (5985002588660) | 5935-00-760-0390 (5935007600390) | |
| 5930-01-473-4841 (5930014734841) | 5962-01-448-8990 (5962014488990) | 5961-01-064-3898 (5961010643898) | 5935-01-206-4968 (5935012064968) | |
| 5945-00-816-6626 (5945008166626) | 5945-01-299-6631 (5945012996631) | 5935-01-643-7425 (5935016437425) | 5950-01-054-2352 (5950010542352) | |
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