For all the NSN 5961-01-037-4712 parts you are seeking, turn to our vast collection of offerings here on Buy Mil Spares. On this page, part numbers like B72159, 231048-706, CR122-04, 20-00779-004, 10133162, and others with the NSN 5961-01-037-4712 are featured alongside applicable listing information for your ease of perusal. If any specific item grabs your attention within our NSN 5961-01-037-4712 inventory, you can use the “RFQ” button to its right to access one of our online quote request forms. Once we have an opportunity to receive and assess the details you provided, you can anticipate a tailored response in 15 minutes or less.
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Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-037-4712 (010374712) |
NCB Code | USA (01) |
Manufacturer | Mbda Incorporated, Bae Systems Inc, Eldec Corporation, Raytheon Company, Nimikkeistokeskus Ncb Finland, Micro Uspd Inc, Military Specifications, Joint Army-Navy Specifications, Lockheed Martin Corporation, Northrop Grumman Systems Corporation, Scientific Atlanta Inc, Rockwell Collins Aerospace |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
B72159 | mbda incorporated | semiconductor device diode | k0967 | RFQ |
231048-706 | bae systems inc | semiconductor device diode | 81413 | RFQ |
CR122-04 | eldec corporation | semiconductor device diode | 08748 | RFQ |
20-00779-004 | raytheon company | semiconductor device diode | 00724 | RFQ |
10133162 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
1N5806JTX | micro uspd inc | semiconductor device diode | 12969 | RFQ |
3323-1229-1 | raytheon company | semiconductor device diode | 3b150 | RFQ |
JANTX1N6075 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5806 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JAN1N5806 | military specifications | semiconductor device diode | 81349 | RFQ |
UTR511 | micro uspd inc | semiconductor device diode | 12969 | RFQ |
MIL-PRF-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
808136-2 | raytheon company | semiconductor device diode | 96214 | RFQ |
7906930-10 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
944467-8060 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
JANTX1N5806 | military specifications | semiconductor device diode | 81349 | RFQ |
163964 | scientific atlanta inc | semiconductor device diode | 10110 | RFQ |
JANTX1N5806US | military specifications | semiconductor device diode | 81349 | RFQ |
353-9019-410 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | CERAMIC OR GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-01-037-4712, 5961010374712 | ||||
5962-01-043-4709 (5962010434709) | 5910-00-061-7075 (5910000617075) | 5945-00-904-4864 (5945009044864) | 5915-01-056-0859 (5915010560859) | |
5995-01-204-7361 (5995012047361) | 5935-01-185-4152 (5935011854152) | 5962-01-196-4660 (5962011964660) | 5910-00-828-8915 (5910008288915) | |
5935-01-582-3602 (5935015823602) | 5925-00-792-3904 (5925007923904) | 5960-00-275-7497 (5960002757497) | 5935-00-954-9081 (5935009549081) | |
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