For all the NSN 5961-00-879-2474 parts you are seeking, turn to our vast collection of offerings here on Buy Mil Spares. On this page, part numbers like 1N3028B, 352250010091, R507-10-1, 5961PL1277846, 174-26729-03, and others with the NSN 5961-00-879-2474 are featured alongside applicable listing information for your ease of perusal. If any specific item grabs your attention within our NSN 5961-00-879-2474 inventory, you can use the “RFQ” button to its right to access one of our online quote request forms. Once we have an opportunity to receive and assess the details you provided, you can anticipate a tailored response in 15 minutes or less.
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| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-879-2474 (008792474) |
| NCB Code | USA (00) |
| Manufacturer | Freescale Semiconductor Inc, Aai Acl Technologies Inc, Thales Nederland Bv, Enersys Inc, Inspektorat Wsparcia Sil Zbrojnych, Gte Communication Systems Corp, Military Specifications, International Rectifier Corporation, Diamond Electronics Inc, Navair And Navsea Managed, Infineon Technologies, Adelco Elektronik Gmbh, Raytheon Company, Itt Federal Laboratories, N A P Smd Technology Inc, Joint Electron Device Engineering |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N3028B | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 1N3028B | aai acl technologies inc | semiconductor device diode | 03864 | RFQ |
| 352250010091 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| R507-10-1 | enersys inc | semiconductor device diode | 28398 | RFQ |
| 5961PL1277846 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 174-26729-03 | gte communication systems corp | semiconductor device diode | 04773 | RFQ |
| 1N3028B | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N1516A | international rectifier corporation | semiconductor device diode | 59993 | RFQ |
| 847003-0020 | diamond electronics inc | semiconductor device diode | 55819 | RFQ |
| 2090254 | navair and navsea managed | semiconductor device diode | 10001 | RFQ |
| MZ22T5 | infineon technologies | semiconductor device diode | 81483 | RFQ |
| JAN1N3028BA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| 4178600-186 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 1N752A | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N1429 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N3028A | military specifications | semiconductor device diode | 81349 | RFQ |
| 705000H138 | itt federal laboratories | semiconductor device diode | 90348 | RFQ |
| VBE890-1N3028B | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| 720670-28 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 1N30208B | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N1779A | n a p smd technology inc | semiconductor device diode | 99942 | RFQ |
| JAN1N3028B | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N3028B | joint electron device engineering | semiconductor device diode | 07688 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| MATT | MATERIAL | GLASS INCLOSURE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABHP | OVERALL LENGTH | 0.371 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 22.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 11.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/115 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-879-2474, 5961008792474 | ||||
| 5998-01-229-5332 (5998012295332) | 5935-01-129-6240 (5935011296240) | 5962-01-375-7347 (5962013757347) | 5985-01-173-5895 (5985011735895) | |
| 5935-01-448-0945 (5935014480945) | 5970-01-506-5523 (5970015065523) | 5998-01-285-1191 (5998012851191) | 5905-01-159-3200 (5905011593200) | |
| 5961-01-235-2883 (5961012352883) | 5905-00-195-2436 (5905001952436) | 5998-01-444-6854 (5998014446854) | 5930-01-364-9796 (5930013649796) | |
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