For all the NSN 5961-00-854-8470 parts you are seeking, turn to our vast collection of offerings here on Buy Mil Spares. On this page, part numbers like 5961008555863, JAN1N3070A, 1065492-001, 847001-0026, 3501397, and others with the NSN 5961-00-854-8470 are featured alongside applicable listing information for your ease of perusal. If any specific item grabs your attention within our NSN 5961-00-854-8470 inventory, you can use the “RFQ” button to its right to access one of our online quote request forms. Once we have an opportunity to receive and assess the details you provided, you can anticipate a tailored response in 15 minutes or less.
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| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-854-8470 (008548470) |
| NCB Code | USA (00) |
| Manufacturer | Eca Etablissement Central Des, Adelco Elektronik Gmbh, Swiss American Jewel Bearings Corp, Diamond Electronics Inc, International Business Machines Corp, Military Specifications, Bundesamt Fuer Ausruestung, Raytheon Company, Fairchild Semiconductor Corp, Airbus Defence And Space Limited, Thales Nederland Bv, Rockwell Collins Aerospace, Freescale Semiconductor Inc, Litton Systems Inc, General Dynamics Advanced, Nautel Limited, Nimikkeistokeskus Ncb Finland |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 5961008555863 | eca etablissement central des | semiconductor device diode | scy13 | RFQ |
| JAN1N3070A | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| 1065492-001 | swiss american jewel bearings corp | semiconductor device diode | 17761 | RFQ |
| 847001-0026 | diamond electronics inc | semiconductor device diode | 55819 | RFQ |
| 3501397 | international business machines corp | semiconductor device diode | 11327 | RFQ |
| 5961008548470 | eca etablissement central des | semiconductor device diode | scy13 | RFQ |
| MIL-PRF-19500/169 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N3070 | military specifications | semiconductor device diode | 81349 | RFQ |
| LQV-071219-0014 | bundesamt fuer ausruestung | semiconductor device diode | cg943 | RFQ |
| 3229454-25 | raytheon company | semiconductor device diode | 82577 | RFQ |
| 1N643A | fairchild semiconductor corp | semiconductor device diode | 07263 | RFQ |
| 5M.5532.223.03 | airbus defence and space limited | semiconductor device diode | d1901 | RFQ |
| VBE890-1N3070 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| 353-3735-010 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-3083-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 418142-1 | raytheon company | semiconductor device diode | 96214 | RFQ |
| 353-3083-100 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 352250010117 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| 353-3339-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 1N628 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 947179-700 | litton systems inc | semiconductor device diode | 13973 | RFQ |
| 847001-0026 | general dynamics advanced | semiconductor device diode | 92325 | RFQ |
| QG19 | nautel limited | semiconductor device diode | 37338 | RFQ |
| 457-6014 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MINIMUM BREAKDOWN VOLTAGE,DC AND 175.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ADAV | OVERALL DIAMETER | 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
| FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEMS: NO DRAWING TO DETERMINE IF ISC CODE 1 ITEM SHOULD ALSO BE NUCLEAR HARDNESS. CANT CHANGE CRITICALITY CODE TO REFLECT NUCLEAR HARDNESS |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-854-8470, 5961008548470 | ||||
| 5905-00-142-3212 (5905001423212) | 5985-01-080-1413 (5985010801413) | 5975-01-577-7246 (5975015777246) | 5930-01-641-9410 (5930016419410) | |
| 5930-00-867-6845 (5930008676845) | 5935-01-555-7317 (5935015557317) | 5962-01-265-8549 (5962012658549) | 5962-00-455-3637 (5962004553637) | |
| 5935-00-006-9143 (5935000069143) | 5940-00-453-7248 (5940004537248) | 5905-01-326-1293 (5905013261293) | 5950-01-093-7925 (5950010937925) | |
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